[ SS = \frackTq \ln(10) \left( 1 + \fracC_depC_ox \right) \approx 60 \text mV/dec at 300K (ideal) ]
Where ( \mu_n ) is electron mobility, ( W/L ) is width-to-length ratio, and ( \lambda ) is channel-length modulation. The subthreshold swing (SS) is the gate voltage needed to change drain current by one decade: [ SS = \frackTq \ln(10) \left( 1 +
[ I_D = \mu_n C_ox \fracWL \left( V_GS - V_th \right) V_DS ] ( W/L ) is width-to-length ratio